廖蕾

更新时间:2024-01-25 20:59

廖蕾,男,博士,1981年10月出生,现任湖南大学物理与微电子科学学院副院长,微纳光电器件与应用教育部重点实验室主任,教授,博士生导师

人物经历

教育经历

2000年-2004年 武汉大学物理学院 本科

2004年-2009年 武汉大学物理学院硕博连读,导师:李金钗 教授

2005年-2007年 中国科学院物理所 联合培养,导师:王恩哥/白雪冬 教授

工作经历

2017年-, 湖南大学物理与微电子科学学院 教授,学院副院长;微纳光电器件与应用教育部重点实验室 主任

2011年-2016年武汉大学物理学院 教授,微电子系 系主任

2009年-2011年加州大学洛杉矶分校 博士后,导师:段镶锋 教授

2007年-2009年南洋理工大学 千禧研究员 导师:申泽襄/于霆 教授

2021年-湖南大学半导体学院院长

政协湖南省第十三届委员会委员

学术兼职

国家重点研发计划纳米专项会评专家

SID(国际信息显示协会)北京分会专业技术委员会委员

IEEE Senior Member

Journal of Physics D: Applied Physics 编委会成员

研究领域

微电子学与固体电子学

科研项目

主持国家重点研发计划课题,国家自然科学基金大科学装置联合基金培育项目,面上项目,优秀青年项目,青年项目,教育部博士点基金,作为科研骨干参加科技部重点基础研究发展计划(973),重大科学研究计划纳米专项,重点研发计划和国家重大专项。

学术成果

20篇代表论文列表 (总Citation>10000, H = 61)

1. L .M Wang, X. M. Zou,* J. Lin, J. Y. Jiang, Y. Liu, X. Q. Liu, X. Zhao, Y. F. Liu,* J. C. Ho, and L. Liao* Perovskite/Black Phosphorus/MoS2 Photogate Reversed Photodiodes with Ultrahigh Light On/Off Ratio and Fast Response ACS Nano 13, 4804, (2019)

2. B. Jiang, Z. Y. Yang, X. Q. Liu,* Y. Liu,* and L. Liao* Interface engineering for two-dimensional semiconductor transistors Nano Today 25, 122, (2019)

3. G. L. Li, A. Abliz, L. Xu, N. Andre, X. Q. Liu, Y. Zeng,* D. Flandre, and L. Liao* Understanding hydrogen and nitrogen doping on active defects in amorphous In-Ga-Zn-O thin film transistors Appl. Phys. Lett. 112, 253504, (2018)

4. X. Q. Liu, R. R. Liang, G. Y. Gao, C. F. Pan,* C. S. Jiang, Q. Xu, J. Luo, X. M. Zou, Z. Y. Yang, L. Liao,* Z. L. Wang* MoS2 Negative Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit Adv. Mater. 30, 1800932, (2018)

5. B. Jiang, J. Su, X. M. Zou, J. H. Liang, J. L. Wang, H. J. Liu, L. P. Feng, C. Z. Jiang, J. He,* L. Liao* Impact of Thickness on Contact Issues for Pinning Effect in Black Phosphorus Field-Effect Transistors Adv. Funct. Mater. 28, 1801398, (2018)

6. Y. Liu, J. Guo, E. B. Zhu, L. Liao, S. J. Lee, M. N. Ding, I. Shakir, V. Gambin, Y. Huang,* X. F. Duan* Approaching the Schottky-Mott limit in van der Waals metal-semiconductor Junctions Nature 557, 696, (2018)

7. Z. Y. Yang, L. Liao,* F. Gong, F. Wang, Z. Wang, X. Q. Liu, X. H. Xiao, W. D. Hu, J. He,* X. F. Duan* WSe2/GeSe Heterojunction Photodiode with Giant Gate Tunability Nano Energy 49, 103, (2018)

8. A. Abliz, Q. G. Gao, D. Wan, X. Q. Liu, L. Xu, C. S. Liu*, C. Z. Jiang, X. F. Li, H. P. Chen, T. L. Guo, L. Liao* Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors ACS Applied Materials & Interface 9, 10798, (2017)

9. Z. Y. Yang, X. Q. Liu, X. M. Zou, J. L. Wang, C. Ma, C. Z. Jiang, J. C. Ho, C. F. Pan, X. H. Xiao*, J. Xiong*, L. Liao* Performance Limits of the Self-Aligned Nanowire Top-Gated MoS2 Transistors Adv. Funct. Mater. 27, 1602250, (2017)

10. J. L. Wang, Q. Yao, C. W. Huang, X. M. Zou, L. Liao*, S. S. Chen, Z. Y. Fan, K. Zhang, W. Wu, X. H. Xiao, C. Z. Jiang, W. W. Wu High Mobility MoS2 Transistors with Low Schottky Barrier Contact by using Atomic Thick h-BN as a Tunneling Layer Adv. Mater. 28, 8302, (2016).

11. X. M. Zou, C. W. Huang, L. F. Wang, L. J. Yin, W. Q. Li, J. L. Wang, B. Wu, Y. Q. Liu, Q. Yao, C. Z. Jiang, W. W. Wu, L. He, S. S. Chen, J. Ho, L. Liao* Dielectric Engineering of Boron Nitride/Hafnium Oxide Heterostructure for High-Performance Two-Dimensional Field Effect Transistors Adv. Mater. 28, 2062, (2016)

12. J. L. Wang, X. M. Zou, X. H. Xiao, L. Xu, C. L. Wang, C. Z. Jiang, J. C. Ho*, T. Wang, J. C. Li, L. Liao* Floating Gate Memory based Monolayer MoS2 Transistor with Metal Nanocrystals embedded in Gate Dielectrics. Small 11, 208, (2015)

13. X. Q. Liu, X. Liu, J. L. Wang, C. N. Liao, X. H. Xiao, S. S. Guo, C. Z. Jiang, Z. Y. Fan, T. Wang, X. S. Chen, W. Lu, W. D. Hu*, L. Liao* Transparent, High-Performance InGaZnO/Aligned-SnO2 Nanowires Composite Thin-Film Transistors and Their Application in Photodetectors. Adv. Mater. 26, 7399, (2014)

14. X. M. Zou, J. L. Wang, C. H. Chiu, Y. Wu, X. H. Xiao, C. Z. Jiang, W. W. Wu, L. Q. Mai, T. S. Chen, J. C. Li, J. C. Ho*, L. Liao*, Interface Engineering for High-Performance Top-Gated MoS2 Field Effect Transistors. Adv. Mater. 26, 6255, (2014)

15. X. M. Zou, J. L. Wang, X. Q. Liu, C. L. Wang, Y. Jiang, Y. Wang, X. H. Xiao, J. C. Ho*, J. C. Li, C. Z. Jiang, Y. Fang, L. Liao*, Rational Design of Sub-ppm Specific Gas Sensors Array based on Metal Nanoparticles Decorated Nanowire Enhancement-Mode Transistors Nano Lett. 13, 3287, (2013)

16. X. Q. Liu, C. L. Wang, B. Cai, X. H. Xiao, S. S. Guo, Z. Y. Fan*, J. C. Li, X. F. Duan, L. Liao*, Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotubes Hybrid Film for Unique Performance Transistor Nano Lett.12, 3596, (2012).

17. L. Liao, X. F. Duan Graphene Transistors for Radio Frequency Electronics Materials Today 15, 328, (2012).

18. L. Liao, J. W. Bai, R. Chen, H. L. Zhou, L. X. Liu, Y. Liu, Y. Huang, X. F. Duan, Scalable Fabrication of Self-Aligned Graphene Transistors and Circuits on Glass Nano Lett. 12, 2653, (2012).

19. L. Liao, Y. C. Lin, M. Q. Bao, R. Cheng, J. W. Bai, Y. Liu, Y. Q. Qu, K.. L. Wang, Y. Huang, X. F. Duan High speed graphene transistors with a self-aligned nanowire gate Nature 467, 305, (2010)

20. L. Liao, J. W. Bai, Y. Q. Qu, Y. C. Lin, Y. J. Li, Y. Huang, and X. F. Duan High-k Oxide Nanoribbons as Gate Dielectrics for High Mobility Top-gated Graphene Transistors PNAS107, 6711 (2010).

奖励荣誉

第十一届“湖南省青年科技奖”(2021)

Highly Cited Researcher (2018)

湖南省“湖湘青年英才” (2017)

中国侨联贡献奖 (2016)

中组部青年拔尖人才计划 (2015)

湖北省自然科学一等奖(排名第二)

国家自然基金优秀青年科学基金 (2012)

Scopus“青年科学家之星”奖 (2011)

全国百篇优秀博士论文提名奖 (2011)

教育部新世纪优秀人才支持计划 (2010)

新加坡千禧奖 (2008)

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